Annealing effects and generation of secondary phases in ZnO after high-dose transition metal implantation

Physica Status Solidi (B) Basic Research

Volumn 247, Issue 6, 2010, Pages 1469-1471

  Geurts, J ^a   Schumm, M ^a   Koerdel, M ^a   Ziereis, C ^a   Muller S ^b   Ronning, C ^c   Dynowska, E ^d   Golacki Z ^d   Szuszkiewicz, W ^d  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b UNIVERSITY OF GÖTTINGEN   (Germany)

^c FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^d INSTITUTE OF PHYSICS   (Poland)

Author keywords

II VI Semiconductors; Raman spectroscopy; X ray diffraction

Indexed keywords

EID: 77954157531     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200983193     Document Type: Article

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