Structural properties of heavily B-doped SiGe thin films for high thermoelectric power

Materials Transactions

Volumn 51, Issue 5, 2010, Pages 878-881

  Takiguchi, Hiroaki ^a   Matoba, Akinari ^b   Sasaki, Kimihiro ^b   Okamoto, Yoichi ^a   Miyazaki, Hisashi ^a   Morimoto, Jun ^a  

^a NATIONAL DEFENSE ACADEMY   (Japan)

^b KANAZAWA UNIVERSITY   (Japan)

Author keywords

Annealing effects; Ion beam sputtering; SiGe; Thermoelectric power; Thin film

Indexed keywords

ANNEALING EFFECTS; ANNEALING TEMPERATURES; ION-BEAM SPUTTERING; POWER FACTORS; QUANTUM SIZE EFFECTS; ROOM TEMPERATURE; SIGE; SIGE THIN FILM;

ANNEALING; ELECTRIC POWER FACTOR; ION BEAMS; SILICON ALLOYS; THERMOELECTRIC POWER; THIN FILMS; VAPOR DEPOSITION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77953993457     PISSN: 13459678     EISSN: None     Source Type: Journal    
DOI: 10.2320/matertrans.E-M2010806     Document Type: Conference Paper

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