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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 8 B, 2002, Pages

Anomalous large thermoelectric power on heavily B-doped SiGe thin films with thermal annealing

(6) Kawahara, Toshio a,b Lee, Sang Min a,b Okamoto, Yoichi a,b Morimoto, Jun a,b Sasaki, Kimihiro a,b Hata, Tomonobu a,b

a NATIONAL DEFENSE ACADEMY (Japan)

b KANAZAWA UNIVERSITY (Japan)

Author keywords

Amorphous semiconductors; Annealing effects; SiGe; Superlattice; Thermoelectric materials; Thermoelectric power

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; BORON; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; HIGH TEMPERATURE EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SUPERLATTICES; THERMOELECTRICITY;

AMORPHOUS SEMICONDUCTORS;

THIN FILMS;

EID: 0037104514 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.l949 Document Type: Article

Times cited : (18)

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