1.54 μm electroluminescence from p-Si anode organic light emitting diode with Bphen: Er(DBM)3phen as emitter and Bphen as electron transport material

Optics Express

Volumn 18, Issue 13, 2010, Pages 13542-13546

  Wei, F ^a   Li, Y Z ^a   Ran, G Z ^a   Qin, G G ^a,b  

^a PEKING UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CESIUM; ELECTROLUMINESCENCE; ELECTRON INJECTION; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; ENERGY TRANSFER; ERBIUM; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED); PHYSICAL OPTICS; SILICON;

ELECTRON TRANSPORT LAYERS; ELECTRON TRANSPORT MATERIALS; HOLE INJECTION; MAXIMUM POWER; ORGANIC LIGHT-EMITTING DEVICES;

SEMICONDUCTING SILICON COMPOUNDS;

ERBIUM; ORGANIC COMPOUND; SILICON;

ARTICLE; CHEMISTRY; ELECTRON TRANSPORT; ILLUMINATION; INSTRUMENTATION; LIGHT; LUMINESCENCE; NEAR INFRARED SPECTROSCOPY; RAMAN SPECTROMETRY;

ELECTRON TRANSPORT; ERBIUM; LIGHT; LIGHTING; LUMINESCENT MEASUREMENTS; ORGANIC CHEMICALS; SILICON; SPECTROSCOPY, NEAR-INFRARED; SPECTRUM ANALYSIS, RAMAN;

EID: 77953832208     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.013542     Document Type: Article

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