Passivated p -type silicon: Hole injection tunable anode material for organic light emission

Applied Physics Letters

Volumn 92, Issue 7, 2008, Pages

  Zhao, W Q ^a   Ran, G Z ^a   Xu, W J ^a   Qin, G G ^a,b  

^a PEKING UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE INJECTION; LIGHT EMISSION; ORGANIC LIGHT EMITTING DIODES (OLED); PASSIVATION;

ELECTRON TRANSPORT LAYER; INDIUM TIN OXIDE; POWER EFFICIENCY;

SEMICONDUCTING SILICON;

EID: 39749147943     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2857543     Document Type: Article

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