Computational materials engineering: Capabilities of atomic-scale prediction of mechanical, thermal, and electrical properties of microelectronic materials

2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010

Volumn , Issue , 2010, Pages

  Mavromaras, A ^a   Rigby, D ^a   Wolf, W ^a   Christensen, M ^a   Halls, M ^a   Freeman, C ^a   Saxe, P ^a   Wimmer, E ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; ALUMINUM/SILICON; ATOMIC SCALE; ATOMIC-SCALE SIMULATIONS; CMOS GATE; COEFFICIENTS OF THERMAL EXPANSIONS; COMPUTATIONAL MATERIALS; DIFFUSION COEFFICIENTS; ELECTRICAL PROPERTY; EXPERIMENTAL OBSERVATION; FIRST-PRINCIPLES; MEASURED DATA; METALLIC NICKEL; MICROELECTRONIC MATERIALS; MICROELECTRONICS MATERIALS; NUMERICAL ALGORITHMS; THEORETICAL APPROACH;

ALUMINUM; ATOMS; DIELECTRIC PROPERTIES; ELASTIC MODULI; EXPERIMENTS; FORECASTING; HAFNIUM COMPOUNDS; INNOVATION; MECHANICAL PROPERTIES; METALLIC COMPOUNDS; MICROELECTRONICS; MICROSYSTEMS; OPTICAL PROPERTIES; SILICON CARBIDE; SILICON NITRIDE; THERMAL EXPANSION; TITANIUM NITRIDE; ZINC; ZINC OXIDE;

MATERIALS PROPERTIES;

EID: 77953706680     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESIME.2010.5464604     Document Type: Conference Paper

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