Resonant-cavity-enhanced mid-infrared photodetector on a silicon platform

Optics Express

Volumn 18, Issue 12, 2010, Pages 12890-12896

  Wang, Jianfei ^a   Hu, Juejun ^a   Becla, Piotr ^a   Agarwal, Anuradha M ^a   Kimerling, Lionel C ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MONOLITHIC INTEGRATED CIRCUITS; OPTOELECTRONIC DEVICES; OXYGEN; PHOTODETECTORS;

CRITICAL COUPLING; DETECTIVITY; ENHANCED DETECTORS; FABRICATION PROCESS; HIGH QUALITY; LOW TEMPERATURE PROCESSING; MID-INFRARED PHOTODETECTORS; MONOLITHIC INTEGRATION; PBTE; PEAK RESPONSIVITY; POLYCRYSTALLINE; READOUT INTEGRATED CIRCUITS; RESONANT CAVITY ENHANCED; RESONANT WAVELENGTHS; ROOM TEMPERATURE; SILICON PLATFORMS;

INFRARED DETECTORS;

EID: 77953576881     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.012890     Document Type: Article

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