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Volumn 96, Issue 23, 2010, Pages

Small gap semiconducting organic charge-transfer interfaces

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED FIELD; BAND DIAGRAMS; ELECTRONIC SYSTEMS; HETERO-INTERFACES; HIGH RESISTANCE; ORGANIC CHARGE; ORGANIC DONORS; ORGANIC HETEROSTRUCTURES; SMALL GAPS; TEMPERATURE DEPENDENCE; TETRACYANOQUINODIMETHANE; TETRATHIAFULVALENES;

EID: 77953488163     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3449558     Document Type: Article
Times cited : (28)

References (20)
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    • -1 and undergoes a Peierls transition into an insulating state at around 57 K (Refs.). The other, which has received much less attention in the literature, is a semiconductor (Refs.). In both cases, a considerable charge transfer takes place from TMTSF to TCNQ; in the metal approximately 0.57 electrons/molecule are transferred, whereas in the semiconductor the charge transfer is reported to be 0.21 electrons/molecule (Ref.).
    • -1 and undergoes a Peierls transition into an insulating state at around 57 K (Refs.). The other, which has received much less attention in the literature, is a semiconductor (Refs.). In both cases, a considerable charge transfer takes place from TMTSF to TCNQ; in the metal approximately 0.57 electrons/molecule are transferred, whereas in the semiconductor the charge transfer is reported to be 0.21 electrons/molecule (Ref.).
  • 17
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    • We performed cyclic-voltammetry measurements to evaluate the relative energy difference between the HOMO of TMTSF and the LUMO of TCNQ. By regarding the electrochemical half-wave potentials as the corresponding donor or acceptor levels, we obtained the relative energy difference of 230 meV in acetonitrile and 270 meV in dichloromethane, respectively (Pt working electrode, Ag/AgCl reference electrode). These values are in good agreement with those extracted from transport measurements (2 Ea ∼140-240 meV).
    • a ∼140-240 meV).


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