High oxide-ion conductivity of monovalent-metal-doped bismuth vanadate at intermediate temperatures

Solid State Ionics

Volumn 181, Issue 15-16, 2010, Pages 719-723

  Taninouchi, Yu ki ^a   Uda, Tetsuya ^a   Ichitsubo, Tetsu ^a   Awakura, Yasuhiro ^a   Matsubara, Eiichiro ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Bi2VO5.5; BIMEVOX; Doping; Electrical conductivity; Oxide ion conductor

Indexed keywords

AC IMPEDANCE SPECTROSCOPY; BIMEVOX; BISMUTH VANADATES; CONDUCTIVITY CHANGES; DC POLARIZATION; DISORDERED PHASE; ELECTRICAL CONDUCTIVITY; HIGH TEMPERATURE; IMPEDANCE SPECTRUM; INTERMEDIATE TEMPERATURES; METAL-DOPED; OXIDE ION CONDUCTORS; OXIDE IONS; OXIDE-ION CONDUCTIVITY; OXYGEN PARTIAL PRESSURE; ROOM TEMPERATURE;

BISMUTH; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; OXYGEN; REACTION INTERMEDIATES; SOLID ELECTROLYTES; SOLID STATE REACTIONS;

IONS;

EID: 77953293993     PISSN: 01672738     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssi.2010.04.005     Document Type: Article

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