Crossover from negative to positive magnetoresistance in a Si delta-doped GaAs single quantum well

Solid State Communications

Volumn 150, Issue 25-26, 2010, Pages 1104-1107

  Lo, Shun Tsung ^a   Chen, Kuang Yao ^a   Su, Yi Chun ^a   Liang, C T ^a   Chang, Y H ^a   Kim, Gil Ho ^b   Wu, J Y ^c   Lin, Sheng Di ^c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b Sungkyunkwan University   (South Korea)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

A. Quantum wells; A. Semiconductors; D. Quantum localization

Indexed keywords

CARRIER DENSITY; DELTA-DOPED; ELECTRON TRANSPORT; GAAS; MAGNETORESISTANCE MEASUREMENTS; NEGATIVE MAGNETORESISTANCE; POSITIVE MAGNETORESISTANCE; QUANTUM LOCALIZATION; QUANTUM WELL; SINGLE QUANTUM WELL; VARIABLE RANGE HOPPING;

ELECTRIC RESISTANCE; GALLIUM ALLOYS; GALLIUM ARSENIDE; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; SEMICONDUCTING GALLIUM;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77953292665     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.03.030     Document Type: Article

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