Electrical properties of the CdTe back contact: A new chemically etching process based on nitric acid/acetic acid mixtures

Applied Surface Science

Volumn 256, Issue 20, 2010, Pages 5803-5806

  Han, Junfeng ^a,b   Fan, Chunjie ^b   Spanheimer, C ^b   Fu, Ganhua ^b   Zhao, Kui ^a   Klein, A ^b   Jaegermann, W ^b  

^a PEKING UNIVERSITY   (China)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Back contact; CdTe; NA etching

Indexed keywords

CADMIUM TELLURIDE; ETCHING; II-VI SEMICONDUCTORS; SCHOTTKY BARRIER DIODES;

BACK CONTACT; BACK CONTACT PERFORMANCE; CDTE; CHEMICAL ETCHING; CONTACT FORMATION; ETCHING SOLUTIONS; POSSIBLE MECHANISMS; SCHOTTKY BARRIERS;

SOLAR CELLS;

EID: 77953172058     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.01.087     Document Type: Article

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