Structure and temperature dependence of conduction mechanisms in hot wall deposited CuInSe2 thin films and effect of back contact layer in CuInSe2 based solar cells

Vacuum

Volumn 84, Issue 10, 2010, Pages 1220-1225

  Agilan, S ^a,b   Mangalaraj, D ^b   Narayandass, Sa K ^b   Mohan Rao, G ^c   Velumani, S ^d  

^a Department of Artificial Intelligence and Machine Learning   (India)

^b BHARATHIAR UNIVERSITY   (India)

^c INDIAN INSTITUTE OF SCIENCE   (India)

^d DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

CuInSe2 thin films; Electrical conductivity; Hot wall deposition; Solar cell and back contact; Structure

Indexed keywords

BACK CONTACT; CHALCOPYRITE STRUCTURES; CLEANED GLASS SUBSTRATES; CONDUCTION MECHANISM; COPPER INDIUM DISELENIDE; DEPOSITED FILMS; DIRECT REACTIONS; ELECTRICAL CONDUCTIVITY; FILL FACTOR; GRAIN SIZE; HIGH PURITY; HOT WALL; HOT WALL DEPOSITION; POLYCRYSTALLINE; PREFERRED ORIENTATIONS; SERIES RESISTANCES; SHUNT RESISTANCES; SINGLE PHASE; STRUCTURAL PARAMETER; STRUCTURE; SUBSTRATE TEMPERATURE; TEMPERATURE DEPENDENCE; TEMPERATURE REGIONS; THERMALLY ACTIVATED PROCESS; VARIABLE RANGE HOPPING; X-RAY DIFFRACTION STUDIES;

COPPER COMPOUNDS; DEPOSITION; ELECTRIC CONDUCTIVITY; INDIUM; MOLYBDENUM; SELENIUM; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; WALLS (STRUCTURAL PARTITIONS); X RAY DIFFRACTION;

FILM PREPARATION;

EID: 77953138810     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.10.029     Document Type: Article

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