Strong enhancement of the tunneling magnetoresistance by electron filtering in an Fe/MgO/Fe/GaAs(001) junction

Physical Review Letters

Volumn 104, Issue 21, 2010, Pages

  Autes G ^a,b   Mathon, J ^a   Umerski, A ^b  

^a CITY UNIVERSITY   (United Kingdom)

^b OPEN UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITY; COMPOSITE SYSTEMS; GAAS; GATE VOLTAGES; ORDERS OF MAGNITUDE; STRONG ENHANCEMENT; TUNNELING JUNCTIONS; TUNNELING MAGNETORESISTANCE;

CARRIER CONCENTRATION; ELECTRIC RESISTANCE; GALLIUM ALLOYS; GALLIUM ARSENIDE; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; TUNNELING (EXCAVATION);

SEMICONDUCTING GALLIUM;

EID: 77953108950     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.104.217202     Document Type: Article

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