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Volumn 79, Issue 5, 2010, Pages

Out-of-plane dielectric behavior of insulating Bi2Sr 2RECu2O8+δ (RE = Dy, Y, and Er)

Author keywords

Bi 2Sr2RECu2O8+ ; Hopping conduction; Interstitial oxygen; Localization; Polarization

Indexed keywords


EID: 77953031571     PISSN: 00319015     EISSN: 13474073     Source Type: Journal    
DOI: 10.1143/JPSJ.79.054709     Document Type: Article
Times cited : (4)

References (30)
  • 15
    • 0017382315 scopus 로고
    • (London)
    • A. K. Jonscher: Nature (London) 267 (1977) 673.
    • (1977) Nature , vol.267 , pp. 673
    • Jonscher, A.K.1
  • 20
    • 77953048503 scopus 로고    scopus 로고
    • These results were observed for the electric field applied along the axis of least conductivity [the (2a*-c*) direction] of K0:3MoO3
    • These results were observed for the electric field applied along the axis of least conductivity [the (2a*-c*) direction] of K0:3MoO3.
  • 23
    • 77953081167 scopus 로고    scopus 로고
    • Consequently, there is no physical meaning in ε' c values for values greater than TM
    • Consequently, there is no physical meaning in ε' c values for values greater than TM.
  • 25
    • 77953040019 scopus 로고    scopus 로고
    • c curve of Dy-Bi2212 obeys the Arrhenius equation. However, the estimated activation energy is only about 54 mV
    • c curve of Dy-Bi2212 obeys the Arrhenius equation. However, the estimated activation energy is only about 54 mV.
  • 27
    • 77953043342 scopus 로고    scopus 로고
    • Consequently, the effective carrier concentration varies with respect to RE elements
    • Consequently, the effective carrier concentration varies with respect to RE elements.
  • 28
    • 77953042783 scopus 로고    scopus 로고
    • The lower onset temperature is frequency dependent, in contrast to TM
    • The lower onset temperature is frequency dependent, in contrast to TM.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.