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Volumn 5, Issue 6, 2010, Pages 1027-1031

Electronic structures of S-doped capped C-SWNT from first principles study

Author keywords

Electronic properties; Single walled carbon nanotube (C SWNT); Workfunctions

Indexed keywords

COUPLED STATE; ELECTRONIC DEVICE; EMISSION PROPERTIES; EXTERNAL ELECTRIC FIELD; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; IN-FIELD; POTENTIAL APPLICATIONS; S-DOPED;

EID: 77953023525     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-010-9594-1     Document Type: Article
Times cited : (10)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.