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Volumn 5, Issue 6, 2010, Pages 1027-1031
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Electronic structures of S-doped capped C-SWNT from first principles study
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Author keywords
Electronic properties; Single walled carbon nanotube (C SWNT); Workfunctions
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Indexed keywords
COUPLED STATE;
ELECTRONIC DEVICE;
EMISSION PROPERTIES;
EXTERNAL ELECTRIC FIELD;
FIRST-PRINCIPLES CALCULATION;
FIRST-PRINCIPLES STUDY;
IN-FIELD;
POTENTIAL APPLICATIONS;
S-DOPED;
CARBON NANOTUBES;
DOPING (ADDITIVES);
ELECTRIC FIELDS;
ELECTRONIC PROPERTIES;
ELECTRONIC STRUCTURE;
SYNTHESIS (CHEMICAL);
THERMOELECTRIC EQUIPMENT;
WAVE FUNCTIONS;
SINGLE-WALLED CARBON NANOTUBES (SWCN);
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EID: 77953023525
PISSN: 19317573
EISSN: 1556276X
Source Type: Journal
DOI: 10.1007/s11671-010-9594-1 Document Type: Article |
Times cited : (10)
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References (15)
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