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Journal of Vacuum Science and Technology B

Volumn 28, Issue 3, 2010, Pages

Suppression of surface leakage currents using molecular beam epitaxy-grown unipolar barriers

(4) Savich, G R a Pedrazzani, J R a Maimon, S a Wicks, G W a

a UNIVERSITY OF ROCHESTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

III-V SEMICONDUCTORS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PASSIVATION; PHOTODIODES;

'CURRENT; ELECTRONICS DEVICES; ELECTRONICS MATERIALS; LIMIT SURFACE; MOLECULAR-BEAM EPITAXY; PASSIVATION LAYER; PERFORMANCE; SURFACE LEAKAGE; SURFACE LEAKAGE CURRENTS; SURFACE PASSIVATION;

INDIUM ARSENIDE;

EID: 77953011324 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3276513 Document Type: Conference Paper

Times cited : (15)

References (8)

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