SCOPUS 정보 검색 플랫폼

Volumn 96, Issue 19, 2010, Pages

Terahertz emission from metal-organic chemical vapor deposition grown Fe:InGaAs using 830 nm to 1.55 μm excitation

(8) Wood, C D a Hatem, O a Cunningham, J E a Linfield, E H a Davies, A G a Cannard, P J b Robertson, M J b Moodie, D G b

a UNIVERSITY OF LEEDS (United Kingdom)

b Ipswich Research Centre (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AT-WAVELENGTH; BROADBAND TERAHERTZ; DOPING LEVELS; ELECTRO-OPTIC DETECTORS; EMISSION SPECTRUMS; EXCITATION WAVELENGTH; FE CONTENT; FE-DOPED; FEMTOSECONDS; METALORGANIC CHEMICAL VAPOR DEPOSITION; OUTPUT POWER; PHOTOCONDUCTIVE EMITTERS; PRECISE CONTROL; TERAHERTZ EMISSIONS; THZ EMISSION; WAVELENGTH RANGES;

DOPING (ADDITIVES); EMISSION SPECTROSCOPY; INDUSTRIAL CHEMICALS; LASER EXCITATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANIC LASERS; PULSED LASER APPLICATIONS; PULSED LASERS; SEMICONDUCTING INDIUM; ZINC COMPOUNDS;

TERAHERTZ WAVES;

EID: 77952980921 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3427191 Document Type: Article

Times cited : (55)

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