The role and mechanism of Fe-ion bombardment in creating highly resistive InGaAs layers

Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006

Volumn , Issue , 2006, Pages 17-20

  Subramaniam, S C ^a   Rezazadeh, A A ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

Activation energy; Annealing; Electrical resistivity; Semiconductor ion implantation

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ELECTRIC CONDUCTIVITY; ION BOMBARDMENT; ION IMPLANTATION; IONIZATION POTENTIAL;

ANNEALING TEMPERATURES; SEMICONDUCTOR ION IMPLANTATION;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 41549132678     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EMICC.2006.282738     Document Type: Conference Paper

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