Thermal shot noise in top-gated single carbon nanotube field effect transistors

Applied Physics Letters

Volumn 96, Issue 19, 2010, Pages

  Chaste, J ^a   Pallecchi, E ^a   Morfin, P ^a   Fve G ^a   Kontos, T ^a   Berroir, J M ^a   Hakonen, P ^b   Plaais B ^a  

^a UNIVERSITÉ PARIS DESCARTES   (France)

^b AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; NANOTRANSISTORS; SHOT NOISE; SINGLE ELECTRON TRANSISTORS; THERMAL NOISE; TRANSCONDUCTANCE; YARN;

CURRENT NOISE; FAST CHARGES; GHZ BAND; HIGH FREQUENCY HF; HOT ELECTRON EFFECTS; NANOTUBE TRANSISTORS; NYQUIST; SINGLE CARBON NANOTUBE;

CARBON NANOTUBE FIELD EFFECT TRANSISTORS;

EID: 77952963881     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3425889     Document Type: Article

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