-
1
-
-
0033880307
-
-
Liu, Y. and Gorla, C. R., J. Electronic Materials, 2000, vol. 29, p. 69.
-
(2000)
J. Electronic Materials
, vol.29
, pp. 69
-
-
Liu, Y.1
Gorla, C.R.2
-
2
-
-
0035971839
-
-
Yang, W. and Vispute, R. D., Appl. Phys. Lett., 2001, vol. 78, p. 2787.
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 2787
-
-
Yang, W.1
Vispute, R.D.2
-
3
-
-
0037091482
-
-
Studenikin, S. A. and Cocivera, M., J. Appl. Phys., 2002, vol. 91, p. 5060.
-
(2002)
J. Appl. Phys.
, vol.91
, pp. 5060
-
-
Studenikin, S.A.1
Cocivera, M.2
-
4
-
-
15844406558
-
-
Aghamalyan, N. R., Hovsepyan, R. K., Poghosyan, A. R., and Lazaryan, V. G., Proc. SPIE, 2004, vol. 5560, p. 235.
-
(2004)
Proc. SPIE
, vol.5560
, pp. 235
-
-
Aghamalyan, N.R.1
Hovsepyan, R.K.2
Poghosyan, A.R.3
Lazaryan, V.G.4
-
7
-
-
0002004359
-
-
Gershenzon, E. M., Ismagilov, F. M., et al., ZhETF, 1991, vol. 100, p. 1029.
-
(1991)
ZhETF
, vol.100
, pp. 1029
-
-
Gershenzon, E.M.1
Ismagilov, F.M.2
-
8
-
-
0038170605
-
-
Aghamalyan, N. R., Ghambaryan, I. A., Goulanian, E. Kh., Hovsepyan, R. K., Kostanyan, R. B., Petrosyan, S. I., Vardanyan, E. S., and Zerrouk, A. F., Semicon. Sci. and Technol., 2003, vol. 18, p. 525.
-
(2003)
Semicon. Sci. And Technol.
, vol.18
, pp. 525
-
-
Aghamalyan, N.R.1
Ghambaryan, I.A.2
Goulanian, E.K.3
Hovsepyan, R.K.4
Kostanyan, R.B.5
Petrosyan, S.I.6
Vardanyan, E.S.7
Zerrouk, A.F.8
-
9
-
-
77952937408
-
-
Aghamalyan, N. R., Hovsepyan, R. K., and Petrosyan, S. I., J. Contemp. Phys. (Armenian Ac. Sci.), 2008, vol. 43, p. 177.
-
(2008)
J. Contemp. Phys. (Armenian Ac. Sci.)
, vol.43
, pp. 177
-
-
Aghamalyan, N.R.1
Hovsepyan, R.K.2
Petrosyan, S.I.3
-
10
-
-
77952931611
-
-
Aghamalyan, N. R. and Hovsepyan, R. K., J. Contemp. Phys. (Armenian Ac. Sci.), 2008, vol. 43, p. 91.
-
(2008)
J. Contemp. Phys. (Armenian Ac. Sci.)
, vol.43
, pp. 91
-
-
Aghamalyan, N.R.1
Hovsepyan, R.K.2
-
11
-
-
33746180934
-
-
Pollak, M., Phys. Rev., 1961, vol. 122, p. 1742.
-
(1961)
Phys. Rev.
, vol.122
, pp. 1742
-
-
Pollak, M.1
-
13
-
-
0017489410
-
-
Elliott, S. R., Davis, E. A., and Pitt, G. D., Solid State Commun., 1977, vol. 22, p. 481.
-
(1977)
Solid State Commun.
, vol.22
, pp. 481
-
-
Elliott, S.R.1
Davis, E.A.2
Pitt, G.D.3
-
14
-
-
38549117411
-
-
Aghamalyan, N. R., Hovsepyan, R. K., Poghosyan, A. R., von Roedern, B., and Vardanyan, E. S., Journal of Optoelectronics and Advanced Materials, 2007, vol. 9, p. 1418.
-
(2007)
Journal of Optoelectronics and Advanced Materials
, vol.9
, pp. 1418
-
-
Aghamalyan, N.R.1
Hovsepyan, R.K.2
Poghosyan, A.R.3
von Roedern, B.4
Vardanyan, E.S.5
-
15
-
-
77952939057
-
Effect of lithium and gallium impurities on optoelectrical properties of ZnO films
-
New York: Nova Science Publishers
-
Aghamalyan, N. R., Kafadaryan, E. A., and Hovsepyan, R. K., Effect of lithium and gallium impurities on optoelectrical properties of ZnO films. Chapter in book "Trends in Semiconductor Science", New York: Nova Science Publishers, 2005, pp. 81-110.
-
(2005)
Chapter in Book "Trends in Semiconductor Science"
, pp. 81-110
-
-
Aghamalyan, N.R.1
Kafadaryan, E.A.2
Hovsepyan, R.K.3
-
16
-
-
0037390982
-
-
Sharma, P., Sreenivas, K., and Rao, K. V., J. Appl. Phys., 2003, vol. 93, p. 3963.
-
(2003)
J. Appl. Phys.
, vol.93
, pp. 3963
-
-
Sharma, P.1
Sreenivas, K.2
Rao, K.V.3
-
19
-
-
27844586470
-
-
Lopatiuk, O. and Chernyak, L., Appl. Phys. Let., 2005, vol. 87, p. 214110.
-
(2005)
Appl. Phys. Let.
, vol.87
, pp. 214110
-
-
Lopatiuk, O.1
Chernyak, L.2
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