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Volumn 44, Issue 1, 2009, Pages 29-35

Hopping and drift mechanisms of photoconductivity in ZnO:Li films

Author keywords

Charge carriers; Hopping and drift mechanisms; Photoconductivity; ZnO:Li films

Indexed keywords


EID: 77952924534     PISSN: 10683372     EISSN: 19349378     Source Type: Journal    
DOI: 10.3103/S106833720901006X     Document Type: Article
Times cited : (2)

References (19)
  • 11
    • 33746180934 scopus 로고
    • Pollak, M., Phys. Rev., 1961, vol. 122, p. 1742.
    • (1961) Phys. Rev. , vol.122 , pp. 1742
    • Pollak, M.1
  • 15
    • 77952939057 scopus 로고    scopus 로고
    • Effect of lithium and gallium impurities on optoelectrical properties of ZnO films
    • New York: Nova Science Publishers
    • Aghamalyan, N. R., Kafadaryan, E. A., and Hovsepyan, R. K., Effect of lithium and gallium impurities on optoelectrical properties of ZnO films. Chapter in book "Trends in Semiconductor Science", New York: Nova Science Publishers, 2005, pp. 81-110.
    • (2005) Chapter in Book "Trends in Semiconductor Science" , pp. 81-110
    • Aghamalyan, N.R.1    Kafadaryan, E.A.2    Hovsepyan, R.K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.