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Volumn , Issue , 2010, Pages 170-175
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Thermal performance of a dual 1.2 kV, 400 A silicon-carbide MOSFET power module
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Author keywords
MOSFET; Power module; Silicon carbide; Thermal modeling; Thermal performance
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Indexed keywords
ALTERNATIVE MATERIALS;
DEVICE TEMPERATURE;
EXPERIMENTAL DATA;
LIQUID COOLING SYSTEMS;
MOS-FET;
POWER MODULE;
TEMPERATURE LIMITS;
THERMAL MODELING;
THERMAL PERFORMANCE;
THERMAL RESISTANCE;
COOLING SYSTEMS;
MIXED CONVECTION;
MOSFET DEVICES;
POWER ELECTRONICS;
SILICON CARBIDE;
THERMAL VARIABLES MEASUREMENT;
THERMOANALYSIS;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 77952645258
PISSN: 10652221
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/STHERM.2010.5444297 Document Type: Conference Paper |
Times cited : (16)
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References (4)
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