N-type Ge-SiGe quantum cascade structure utilizing quantum wells for electrons in the L and Γ valleys

IEEE Photonics Technology Letters

Volumn 20, Issue 6, 2008, Pages 419-421

  Han, Genquan ^a   Yu, Jinzhong ^a   Liu, Yan ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Quantum cascade (QC) structure; SiGe

Indexed keywords

BOUND-TO-CONTINUUM; ELECTRONIC QUANTUM WELLS; INJECTION EFFICIENCY; INTERVALLEY SCATTERING; L-VALLEY; MINIBAND TRANSPORT; N-TYPE GE; QUANTUM CASCADE STRUCTURES; QUANTUM WELL; SUB-BANDS; TUNNELING RATES; ULTRA-FAST; VERTICAL TRANSITIONS;

GERMANIUM; LANDFORMS; QUANTUM ELECTRONICS; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WELLS; SILICON ALLOYS; TUNNELING (EXCAVATION);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77952567646     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.916946     Document Type: Article

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