Amorphous silicon based p-i-i-n photodetectors for point-of-care testing

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 3-4, 2010, Pages 1160-1163

  Sämann, Marc ^a   Furin, Dominik ^b   Thielmann, Johannes ^c   Pfäfflin, Albrecht ^d   Proll, Günther ^b   Harendt, Christine ^c   Gauglitz, Günther ^b   Schleicher, Erwin ^d   Schubert, Markus B ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

^b UNIVERSITY OF TÜBINGEN   (Germany)

^c Institut fur Mikroelektronik Stuttgart   (Germany)

^d UNIVERSITY HOSPITAL TÜBINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION CHARACTERISTICS; AMORPHOUS SILICON (A-SI); BUFFER SOLUTIONS; C-REACTIVE PROTEINS; FREQUENCY CONVERSIONS; HIGHLY SENSITIVE; INTEGRATED APPLICATIONS; INTRINSIC LAYER; LABEL FREE; LABEL-FREE DETECTION; MEDICAL DIAGNOSTICS; P-TYPE; POINT-OF-CARE TESTING; QUICK TESTS; REAR SIDE; REFLECTOMETRIC INTERFERENCE SPECTROSCOPY; SPECTRAL SENSITIVITY; THIN FILM PHOTODETECTORS; THIN-FILM TECHNOLOGY;

AMORPHOUS FILMS; APPLICATION SPECIFIC INTEGRATED CIRCUITS; COMPUTER CRIME; LABELS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PROTEINS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SPECTROSCOPY; THIN FILMS;

AMORPHOUS SILICON;

EID: 77952564985     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982822     Document Type: Conference Paper

References (3)

1. G. Gauglitz, A. Brecht, G. Kraus, and W. Nahm, Sens. Actuators B 11, 21 (1993)
2. R. Brüggemann, T. Neidlinger, and M. B. Schubert, J. Appl. Phys. 81, 7666 (1997)
3. M. Sämann, L. Steinle, and M. B. Schubert, J. Non-Cryst. Solids 354, 2575 (2008)