Amorphous silicon based p-i-i-n photodetector detects 12 nm thin protein layers

Journal of Non-Crystalline Solids

Volumn 354, Issue 19-25, 2008, Pages 2575-2579

  Sämann, Marc ^a   Steinle, Lutz ^b   Schubert, Markus B ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

^b UNIVERSITY OF TÜBINGEN   (Germany)

Author keywords

Biosensors; Sensors

Indexed keywords

AMORPHOUS SILICON; HOSPITALS; MEDICINE; OPTICAL PROPERTIES; PHOTODIODES; PROTEINS;

BIOANALYTICS; POINT-OF-CARE TESTING (POCT); TEMPERATURE DEPOSITION; THIN FILM DETECTORS;

PHOTODETECTORS;

EID: 42649093197     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2007.09.041     Document Type: Article

References (8)

1. Gauglitz G., Brecht A., Kraus G., and Nahm W. Sensor. Actuat. B-Chem. 11 (1993) 21
2. Brüggemann R., Neidlinger T., and Schubert M.B. J. Appl. Phys. 81 (1997) 7666
3. A. Brecht, Interferenzspektroskopische Untersuchung von Affinitätsreaktionen, Dissertation, Universität Tübingen, 1993.
4. Zeman M., Tao G., Trijssenaar M., Willemen J., Metselaar W., and Schropp R.M. Mat. Res. Soc. Symp. Proc. 377 (1995) 639
5. Street R.A. Hydrogenated Amorphous Silicon (1991), Cambridge University Press
6. Brassard D., and El Khakani M.A. J. Appl. Phys. 93 (2003) 4066
7. E. Lotter, 2007. .
8. Neidlinger T., Brüggemann R., Brummack H., and Schubert M.B. J. Non-Cryst. Solids 1335 (1998) 227