Defects and structure of μc-SiOx:H deposited by PECVD

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 3-4, 2010, Pages 941-944

  Xiao, Lihong ^a   Astakhov, Oleksandr ^a   Carius, Reinhard ^a   Lambertz, Andreas ^a   Grundler, Thomas ^a,b   Finger, Friedhelm ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY COMPOSITIONS; CRYSTALLINITIES; DARK CONDUCTIVITY; DOPED SAMPLE; ELECTRON SPIN RESONANCE; ELECTRONIC TRANSPORT; ESR SPECTRA; G-VALUES; H MATRIX; PARAMAGNETIC DEFECTS; PHASE MIXTURE; SPIN DENSITIES;

ALLOYING; CHEMICAL VAPOR DEPOSITION; DEFECTS; ELECTRON SPIN RESONANCE SPECTROSCOPY; MICROCRYSTALLINE SILICON; NANOCRYSTALLINE ALLOYS; PHOSPHORUS; SILICON ALLOYS; SILICON COMPOUNDS; SILICON OXIDES; SPIN DYNAMICS;

AMORPHOUS SILICON;

EID: 77952556055     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982870     Document Type: Conference Paper

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