Ferredoxin molecular thin film with intrinsic switching mechanism for biomemory application

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 5, 2010, Pages 3220-3223

  Yagati, Ajay Kumar ^a   Kim, Sang Uk ^a   Min, Junhong ^b   Choi, Jeong Woo ^a  

^a Sogang University   (South Korea)

^b Gachon University College of Medicine   (South Korea)

Author keywords

Biomemory; Electrochemical; Ferredoxin; Nanobiochip; Open circuit potential amperometry

Indexed keywords

AMPEROMETRY; AU ELECTRODES; BIOELECTRONIC DEVICE; BIOMEMORY; BISTABLES; CHARGE TRANSFER MECHANISMS; CYSTEINE RESIDUES; DATA STORAGE; DIGITAL MEMORY; ELECTRICAL CONDUCTIVITY; FABRICATED DEVICE; MEMORY EFFECTS; MEMORY SWITCHING; MOLECULAR THIN FILM; NANO SCALE; OPEN CIRCUIT POTENTIAL; PROTEIN MOLECULES; REDOX VOLTAGES; SCANNING TUNNELING MICROSCOPES; SITE DIRECTED MUTAGENESIS; SURFACE PLASMON RESONANCE SPECTROSCOPY; SWITCHING MECHANISM; THIN FILM FORMATION;

CHARGE TRANSFER; ELECTRIC CONDUCTIVITY; GOLD; ION EXCHANGE; MASS TRANSFER; MOLECULES; SURFACE PLASMON RESONANCE; THIN FILMS;

CYCLIC VOLTAMMETRY;

BIOMIMETIC MATERIAL; FERREDOXIN;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; DATA STORAGE DEVICE; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; RHODOBACTER SPHAEROIDES; SIGNAL PROCESSING;

BIOMIMETIC MATERIALS; COMPUTER STORAGE DEVICES; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; FERREDOXINS; MEMBRANES, ARTIFICIAL; RHODOBACTER SPHAEROIDES; SIGNAL PROCESSING, COMPUTER-ASSISTED;

EID: 77952520310     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.2229     Document Type: Conference Paper

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