Tailoring morphology in free-standing anodic aluminium oxide: Control of barrier layer opening down to the sub-10 nm diameter

Nanoscale

Volumn 2, Issue 5, 2010, Pages 778-785

  Gong, Jie ^a,c   Butler, William H ^a   Zangari, Giovanni ^b  

^a University of Alabama   (United States)

^b University of Virginia   (United States)

^c SEAGATE TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINIUM OXIDE; ANODIC ALUMINIUM OXIDE; ANODIZATIONS; BARRIER LAYERS; CHEMICAL ETCHING; ETCHING TIME; ION BEAM ETCHING; PORE OPENINGS;

ALUMINUM; DISSOLUTION; ION BEAMS; MERCURY COMPOUNDS; OXIDES; PHOSPHORIC ACID; SULFURIC ACID;

ETCHING;

ALUMINUM OXIDE; MERCURIC CHLORIDE; NANOMATERIAL; OXALIC ACID; PHOSPHORIC ACID; SULFURIC ACID;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; ELECTRODE; POROSITY; ULTRASTRUCTURE;

ALUMINUM OXIDE; ELECTRODES; MERCURIC CHLORIDE; MICROSCOPY, ATOMIC FORCE; NANOSTRUCTURES; OXALIC ACID; PHOSPHORIC ACIDS; POROSITY; SULFURIC ACIDS;

EID: 77952395722     PISSN: 20403364     EISSN: 20403372     Source Type: Journal    
DOI: 10.1039/c0nr00055h     Document Type: Article

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