High density and ultra small cell size of contact ReRAM (CR-RAM) in 90nm CMOS logic technology and circuits

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Tseng, Yuan Heng ^a   Huang, Chia En ^a   Kuo, C H ^b   Chih, Y D ^b   Lin, Chrong Jung ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

90NM CMOS; CELL SIZE; CONTACT HOLES; DATA RETENTION; DIFFUSION REGION; HIGH DENSITY; K -CYCLE; RESET CURRENTS; RESISTIVE SWITCHING; SET VOLTAGE; SI SUBSTRATES; ULTRA-SMALL;

CMOS INTEGRATED CIRCUITS; LOGIC CIRCUITS;

ELECTRON DEVICES;

EID: 77952345783     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424408     Document Type: Conference Paper

References (4)

1. D. Lee, et al., " Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications," in IEDM Tech. Dig., 2006.
2. 3 Schottky Junction for Multi-bit Nonvolatile Memory Application," in IEDM Tech. Dig., pp 758-761, 2005.
3. K. Tsunoda, et al., " Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3V," in IEDM Tech. Dig., pp. 767-770, 2007.
4. 2 Based RRAM," in IEDM Tech. Dig., 2008.