Evolution of microstructure and related properties of PbZr0.4 Ti0.6 O3 films on F-doped tin oxide with annealing temperature

Journal of Applied Physics

Volumn 107, Issue 8, 2010, Pages

  Zhang, T ^a   Hu, G J ^a   Bu, H J ^a   Wu, J ^a   Chu, J H ^a   Dai, N ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CHEMICAL SOLUTION DEPOSITION; CRACK-FREE SURFACES; LAYERED STRUCTURES; PEAK REFLECTIVITY; PEROVSKITE PHASE; PROCESSING CONDITION; REMANENT POLARIZATION; TIN OXIDE THIN FILM; TRANSPARENT CONDUCTIVE;

ANNEALING; CONDUCTIVE FILMS; FERROELECTRIC FILMS; FILM PREPARATION; MICROSTRUCTURAL EVOLUTION; MULTILAYERS; OPTICAL MULTILAYERS; OPTICAL PROPERTIES; OXIDE MINERALS; PEROVSKITE; TIN; TITANIUM COMPOUNDS;

OXIDE FILMS;

EID: 77952337665     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3388013     Document Type: Article

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