High-speed graphene interconnects monolithically integrated with CMOS ring oscillators operating at 1.3GHz

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Chen, Xiangyu ^a   Lee, Kyeong Jae ^b   Akinwande, Deji ^a   Close, Gael F ^a   Yasuda, Shinichi ^c   Paul, Bipul ^d   Fujita, Shinobu ^c   Kong, Jing ^b   Wong, H S Philip ^a  

^a Stanford University   (United States)

^b Department of Electrical Engineering and Computer Science   (United States)

^c TOSHIBA CORPORATION   (Japan)

^d Toshiba America Research Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION TECHNIQUE; HIGH-SPEED; M-TECHNOLOGIES; MONOLITHICALLY INTEGRATED; ON CHIPS; RING OSCILLATOR; RING OSCILLATOR CIRCUITS;

CMOS INTEGRATED CIRCUITS; ELECTRON DEVICES;

OSCILLATORS (ELECTRONIC);

EID: 77952328802     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424293     Document Type: Conference Paper

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