-
1
-
-
0038710092
-
Modelling, simulations and measurements of electrothermal characteristics in semiconductor devices and electronic circuits
-
Polish, presented at, Gdynia
-
J. Zarȩbski, "Modelling, simulations and measurements of electrothermal characteristics in semiconductor devices and electronic circuits," (in Polish) presented at the Proceedings of the Gdynia Maritime Acad., Gdynia, 1996.
-
(1996)
The Proceedings of the Gdynia Maritime Acad.
-
-
Zarȩbski, J.1
-
2
-
-
77952155454
-
Modelowanie nieizotermicznych charakterystyk wybranych element́ow ṕóprzewodnikowych w programie APLAC
-
(in Polish), Not-Sigma
-
K. Ǵorecki and J. Zarȩbski, "Modelowanie nieizotermicznych charakterystyk wybranych element́ow ṕó przewodnikowych w programie APLAC," (in Polish) Elektronizacja, Not-Sigma, no.12, pp. 19-22, 2001.
-
(2001)
Elektronizacja
, Issue.12
, pp. 19-22
-
-
Ǵorecki, K.1
Zarȩbski, J.2
-
3
-
-
84937744575
-
Modeling and simulation of insulatedgate field-effect transistor switching circuits
-
Sep.
-
H. Shichman and D. A. Hodges, "Modeling and simulation of insulatedgate field-effect transistor switching circuits," IEEE J. Solid-State Circuits, vol.SC-3, no.3, pp. 285-289, Sep. 1968
-
(1968)
IEEE J. Solid-State Circuits
, vol.SC-3
, Issue.3
, pp. 285-289
-
-
Shichman, H.1
Hodges, D.A.2
-
4
-
-
0043211490
-
The simulation of MOS integrated circuits using SPICE2
-
Univ. California, Berkeley, Memo. M80/7, Feb.
-
A. Vladimirescu and S. Lui, "The simulation of MOS integrated circuits using SPICE2," Electron. Res. Laboratory, Univ. California, Berkeley, Memo. M80/7, Feb. 1980.
-
(1980)
Electron. Res. Laboratory
-
-
Vladimirescu, A.1
Lui, S.2
-
6
-
-
0023401686
-
BSIM: Berkeley short-channel IGFET model for MOS transistors
-
Aug.
-
B. J. Sheu, D. L. Scharfetter, P.-K. Ko, and M.-C. Jeng, "BSIM: Berkeley short-channel IGFET model for MOS transistors," IEEE J. Solid-State Circuits, vol.SC-22, no.4, pp. 558-566, Aug. 1987.
-
(1987)
IEEE J. Solid-State Circuits
, vol.SC-22
, Issue.4
, pp. 558-566
-
-
Sheu, B.J.1
Scharfetter, D.L.2
Ko, P.-K.3
Jeng, M.-C.4
-
7
-
-
0003438251
-
The EPFL-EKV MOSFET model equations for simulation technical report: Model version 2.6. Electon. Lab.
-
Sep., Lausanne, Switzerland [Online]. Available
-
M. Bucher, C. Lallement, C. Enz, F. Theodoloz, and F. Krummenacher (1997, Sep.). The EPFL-EKV MOSFET model equations for simulation technical report: Model version 2.6. Electon. Lab., Swiss Federal Inst. Technol. (EPFL), Lausanne, Switzerland [Online]. Available: http://legwww.epfl.ch/ekv/pdf/ekv-v262.pdf
-
(1997)
Swiss Federal Inst. Technol. (EPFL)
-
-
Bucher, M.1
Lallement, C.2
Enz, C.3
Theodoloz, F.4
Krummenacher, F.5
-
8
-
-
77952125603
-
SPICE2 computer models for HEXFETs
-
Reprint, International Rectifier Corporation #HDB-3, Application Note
-
J. C. Bowers and H. A. Neinhaus, "SPICE2 computer models for HEXFETs," in HEXFET Power MOSFET Databook, Reprint, International Rectifier Corporation #HDB-3, Application Note 954 A, 1993, pp. A153-A160.
-
(1993)
HEXFET Power MOSFET Databook
, vol.954 A
-
-
Bowers, J.C.1
Neinhaus, H.A.2
-
9
-
-
77952197506
-
-
[Online]. Available
-
International Rectifier website. [Online]. Available: http://www.i-r.com
-
-
-
-
10
-
-
77952156704
-
-
MTD15N06V SPICE model. [Online]. Available
-
MTD15N06V SPICE model. [Online]. Available: http://www.onsemi. com/site/products/summary/04450,MTD15N06V,00.html#appsmodels
-
-
-
-
11
-
-
0027153876
-
SPICE-simulation of nonlinear effects in filed-effect-transistors caused by thermal power feedback
-
Chicago, IL
-
E. Schurack, T. Latzel, and A. Gottwald, "SPICE-simulation of nonlinear effects in filed-effect-transistors caused by thermal power feedback," in Proc. IEEE ISCAS, Chicago, IL, 1993, vol.2, pp. 1116-1119.
-
(1993)
Proc. IEEE ISCAS
, vol.2
, pp. 1116-1119
-
-
Schurack, E.1
Latzel, T.2
Gottwald, A.3
-
12
-
-
57849121661
-
High level description of thrmodynamical effects in the EKV 2.6 MOST model
-
C. Lallement, F. Pecheux, and W. Grabinski, "High level description of thrmodynamical effects in the EKV 2.6 MOST model," in Proc. 9th Int. Conf.Mixed Des. Integr. Circuits Syst. (MIXDES), Wroc?aw, 2002, pp. 45- 50.
-
(2002)
Proc. 9th Int. Conf.Mixed Des. Integr. Circuits Syst. (MIXDES), Wroc?aw
, pp. 45-50
-
-
Lallement, C.1
Pecheux, F.2
Grabinski, W.3
-
13
-
-
77952181430
-
-
Pspice Libraries for CoolMOS Power Transistors. [Online]. Available
-
Pspice Libraries for CoolMOS Power Transistors. [Online]. Available: http://www.infineon.com
-
-
-
-
14
-
-
77952117860
-
A revised MOSFET model with dynamic temperature compensation
-
South Portland, ME, Application Note
-
A. Laprade, S. Pearson, S. Benczkowski, G. Dolny, and F. Wheatley, "A revised MOSFET model with dynamic temperature compensation," Fairchild Semiconductor Corporation, South Portland, ME, Application Note 7533, 2003.
-
(2003)
Fairchild Semiconductor Corporation
, vol.7533
-
-
Laprade, A.1
Pearson, S.2
Benczkowski, S.3
Dolny, G.4
Wheatley, F.5
-
15
-
-
77952162695
-
Fundacja Rozwoju Akademii Morskiej w Gdyni, Gdynia
-
(in Polish )
-
J. Zarȩbski, "Tranzystory MOS mocy," (in Polish ) Fundacja Rozwoju Akademii Morskiej w Gdyni, Gdynia, 2007.
-
(2007)
Tranzystory MOS Mocy
-
-
Zarȩbski, J.1
-
16
-
-
34748882953
-
A new PSPICE power MOSFET subcircuit with associated thermal waveforms of the L 2 FET: A 5 volt gate drive power MOSFET
-
Vorspann
-
F. Giovanni, G. Bazzano, and A. Grimaldi, "A new PSPICE power MOSFET subcircuit with associated thermal waveforms of the L 2 FET: A 5 volt gate drive power MOSFET," in Proc. Power Electron. Intell. Motion Power Qual. Conf. (PCIM), Vorspann, 2002, pp. 271-276.
-
(2002)
Proc. Power Electron. Intell. Motion Power Qual. Conf. (PCIM)
, pp. 271-276
-
-
Giovanni, F.1
Bazzano, G.2
Grimaldi, A.3
-
17
-
-
48149104703
-
Simulation of electrothermal MOS circuits using Saber
-
Santa Clara
-
C. C. Liu, E. T. Carlen, K. D. Wise, and C. H. Mastrangelo, "Simulation of electrothermal MOS circuits using Saber," in Proc. Tech. Int. Conf. Model. Simul. Microsyst., Santa Clara, 1998, pp. 239-244.
-
(1998)
Proc. Tech. Int. Conf. Model. Simul. Microsyst.
, pp. 239-244
-
-
Liu, C.C.1
Carlen, E.T.2
Wise, K.D.3
Mastrangelo, C.H.4
-
18
-
-
47249159485
-
Modeling nonisothermal characteristics of switch-mode voltage regulators
-
Jul.
-
K. Ǵorecki and J. Zarȩbski, "Modeling nonisothermal characteristics of switch-mode voltage regulators," IEEE Trans. Power Electron., vol.23, no.4, pp. 1848-1858, Jul. 2008.
-
(2008)
IEEE Trans. Power Electron.
, vol.23
, Issue.4
, pp. 1848-1858
-
-
Ǵorecki, K.1
Zarȩbski, J.2
-
19
-
-
47249142274
-
A new electrothermal model of the power MOSFET for SPICE
-
Szczecin
-
J. Zarȩbski, K. Ǵorecki, and D. Bisewski, "A new electrothermal model of the power MOSFET for SPICE," in Proc. 11th Int. Conf. Mixed Des. Integr. Circuits Syst. (MIXDES), Szczecin, 2004, pp. 89-93.
-
(2004)
Proc. 11th Int. Conf. Mixed Des. Integr. Circuits Syst. (MIXDES)
, pp. 89-93
-
-
Zarȩbski, J.1
Ǵorecki, K.2
Bisewski, D.3
-
20
-
-
32644433689
-
Modelling CoolMOS transistors in SPICE
-
J. Zarȩbski and K. Ǵorecki, "Modelling CoolMOS transistors in SPICE," Inst. Electr. Eng. Proc. Cicuits, Devices Syst., vol.153, no.1, pp. 46-52, 2006.
-
(2006)
Inst. Electr. Eng. Proc. Cicuits, Devices Syst.
, vol.153
, Issue.1
, pp. 46-52
-
-
Zarȩbski, J.1
Ǵorecki, K.2
-
21
-
-
76649115586
-
Modelling CoolMOSC3 transistor characteristics in SPICE
-
Devices Fields
-
K. Ǵorecki and J. Zarȩbski, "Modelling CoolMOSC3 transistor characteristics in SPICE," Int. J. Num. Model. Electron. Netw., Devices Fields, vol.23, no.2, pp. 127-139, 2010.
-
(2010)
Int. J. Num. Model. Electron. Netw.
, vol.23
, Issue.2
, pp. 127-139
-
-
Ǵorecki, K.1
Zarȩbski, J.2
-
22
-
-
57849099803
-
Modelling trenchMOSFETs in SPICE
-
Malta
-
J. Zarȩbski and K. Ǵorecki, "Modelling TrenchMOSFETs in SPICE," in Proc. 15th IEEE Int. Conf. Electron, Circuits Syst. (ICECS), Malta, 2008, pp. 73-76.
-
(2008)
Proc. 15th IEEE Int. Conf. Electron, Circuits Syst. (ICECS)
, pp. 73-76
-
-
Zarȩbski, J.1
Ǵorecki, K.2
-
23
-
-
76649104692
-
The compact d.c. electrothermal model of power MOSFET for SPICE
-
Devices Fields
-
J. Zarȩbski, "The compact d.c. electrothermal model of power MOSFET for SPICE," Int. J. Num. Model. Electron. Netw., Devices Fields, vol.23, no.2, pp. 140-150, 2010.
-
(2010)
Int. J. Num. Model. Electron. Netw.
, vol.23
, Issue.2
, pp. 140-150
-
-
Zarȩbski, J.1
-
24
-
-
0032204042
-
Thermal Resistance Analysis By Induced Transient (TRAIT) method for power electronic devices thermal characterization - Part I: Fundamentals and theory
-
PII S0885899398064771
-
P. E. Bagnoli, C. Casarosa, M. Ciampi, and E. Dallago, "Thermal resistance analysis by induced transient (TRAIT) method for power electronic devices thermal characterization. I. Fundamentals and theory," IEEE Trans. Power Electron., vol.13, no.6, pp. 1208-1219, Nov. 1998. (Pubitemid 128742372)
-
(1998)
IEEE Transactions on Power Electronics
, vol.13
, Issue.6
, pp. 1208-1219
-
-
Bagnoli, P.E.1
Casarosa, C.2
Ciampi, M.3
Dallago, E.4
-
25
-
-
0041163510
-
A new evaluation method of thermal transient measurement results
-
V. Szekely, "A new evaluation method of thermal transient measurement results," Microelectron. J., vol.28, no.3, pp. 277-292, 1997.
-
(1997)
Microelectron. J.
, vol.28
, Issue.3
, pp. 277-292
-
-
Szekely, V.1
-
26
-
-
77952190017
-
-
IRF840 - 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET.Catalogue data, South Portland, ME
-
IRF840 - 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET. Catalogue data, Fairchild Semiconductor, South Portland, ME, 2002.
-
(2002)
Fairchild Semiconductor
-
-
-
27
-
-
77952132912
-
-
MTD20N06V TMOS VTM Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate, Technical data, Hong Kong
-
MTD20N06V TMOS VTM Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate. Technical data, Motorola Semiconductor, Hong Kong, 1996.
-
(1996)
Motorola Semiconductor
-
-
-
28
-
-
77952134606
-
Układ do automatycznego pomiaru nieizotermicznych charakterystyk statycznych element́ow ṕóprzewodnikowych,"
-
in Polish
-
K. Ǵorecki and J. Zarȩbski, "Układ do automatycznego pomiaru nieizotermicznych charakterystyk statycznych element́ow ṕóprzewodnikowych," (in Polish ) Metrologia i Systemy Pomiarowe, vol.VII, no.1, pp. 45-57, 2000.
-
(2000)
Metrologia i Systemy Pomiarowe
, vol.7
, Issue.1
, pp. 45-57
-
-
Ǵorecki, K.1
Zarȩbski, J.2
|