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Volumn 53, Issue , 2010, Pages 434-435

A 7Gb/s/pin GDDR5 SDRAM with 2.5ns bank-to-bank active time and no bank-group restriction

Author keywords

[No Author keywords available]

Indexed keywords

3D GRAPHICS; CHANNEL CROSSTALK; CROSS-TALK CANCELLER; HIGH BANDWIDTH; HIGHER RESOLUTION; MEMORY INTERFACE; PACKAGE ROUTING; PHYSICAL LIMITS; REALISTIC MODELING; REFERENCE VOLTAGES; SINGLE-ENDED; SPEED IMPROVEMENT; TRACE LENGTH;

EID: 77952117178     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2010.5433889     Document Type: Conference Paper
Times cited : (14)

References (4)
  • 3
    • 0026141225 scopus 로고
    • Current-mode techniques for highspeed VLSI circuits with application to current sense amplifier for CMOS SRAM's
    • April
    • E. Seevinck, van P. J. Beers, H. Ontrop, "Current-mode techniques for highspeed VLSI circuits with application to current sense amplifier for CMOS SRAM's," Solid-State Circuits, IEEE Journal of, Volume 26, Issue 4, April 1991
    • (1991) Solid-State Circuits, IEEE Journal of , vol.26 , Issue.4
    • Seevinck, E.1    Van Beers, P.J.2    Ontrop, H.3
  • 4
    • 0033169552 scopus 로고    scopus 로고
    • Optimization of word-line booster circuits for low-voltage flash memories
    • Aug.
    • T. Tanzawa, S. Atsumi, "Optimization of word-line booster circuits for low-voltage flash memories," Solid-State Circuits, IEEE Journal of, Volume 34, Issue 8, Aug. 1999.
    • (1999) Solid-State Circuits, IEEE Journal of , vol.34 , Issue.8
    • Tanzawa, T.1    Atsumi, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.