Validation of the predictive power of a calibrated physical stochastic resist model

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7520, Issue , 2009, Pages

  Robertson, Stewart A ^a   Biafore, John J ^a   Smith, Mark D ^a   Reilly, Michael T ^b   Wandell, Jerome ^b  

^a KLA Tencor Austin   (United States)

^b Dow Electronic Materials   (United States)

Author keywords

Line Edge Roughness (LER); LineWidth Roughness (LWR); PROLITH; Stochastic lithographic modeling

Indexed keywords

CALIBRATED MODEL; ELECTRONIC MATERIALS; EXPERIMENTAL DATA; EXPOSURE CONDITIONS; LINE EDGE ROUGHNESS; LINEWIDTH ROUGHNESS; LITHOGRAPHY SIMULATION; PREDICTIVE POWER; PROLITH; PROTOTYPE VERSIONS; RESIST MODELS; ROOT MEAN SQUARED ERRORS;

COMPUTER SIMULATION; COMPUTER SOFTWARE; PHOTORESISTS; STOCHASTIC MODELS; STOCHASTIC SYSTEMS;

ROUGHNESS MEASUREMENT;

EID: 77952060264     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.836901     Document Type: Conference Paper

References (2)

1. Biafore et al., "Statistical simulation of resist at EUV and ArF', SPIE Vol. 7273, 727343, 2009.
2. Biafore et al., "Pattern prediction at EUV", SPIE Vol. 7520, Paper 30 (This Symposium), 2009.