Luminescence induced by elastic and plastic deformation of II - VI semiconductors at fixed strain rates

Optoelectronics and Advanced Materials, Rapid Communications

Volumn 3, Issue 11, 2009, Pages 1181-1189

  Chandra, B P ^a   Goutam, R K ^b   Chandra, V K ^c   Patel, R P ^a   Luka, A K ^d   Baghel, R N ^e  

^a Shri Shankaracharya Group of Institution   (India)

^b RANI DURGAVATI UNIVERSITY   (India)

^c CHHATRAPATI SHIVAJI INSTITUTE OF TECHNOLOGY   (India)

^d Govt Nagarjuna PG College of Science   (India)

^e PT RAVISHANKAR SHUKLA UNIVERSITY   (India)

Author keywords

Dislocations electron traps; II VI semiconductors; Luminescence; Mechanoluminescence; Optical properties

Indexed keywords

CRYSTALS; DISLOCATIONS (CRYSTALS); EFFICIENCY; ELECTRON TRAPS; ELECTRONS; II-VI SEMICONDUCTORS; LUMINESCENCE; OPTICAL PROPERTIES; PLASTIC DEFORMATION; RELAXATION TIME; TEMPERATURE; TRIBOLUMINESCENCE; WIDE BAND GAP SEMICONDUCTORS; ZINC SULFIDE;

DISLOCATION SEGMENTS; ELASTIC AND PLASTIC DEFORMATION; INCREASING TEMPERATURES; INTERACTION OF DISLOCATIONS; LUMINESCENCE EFFICIENCIES; MECHANICAL INTERACTIONS; MOVING DISLOCATION; SATURATION REGION;

STRAIN RATE;

EID: 77951998611     PISSN: 18426573     EISSN: 20653824     Source Type: Journal    
DOI: None     Document Type: Article

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