Theoretical approach to the tunneling mechanoluminescence produced during cleavage of II-VI semiconductors

Indian Journal of Engineering and Materials Sciences

Volumn 11, Issue 5, 2004, Pages 421-428

  Choudhary, Vibha ^a   Singh, Anubha ^a   Chandra, V K ^b   Gupta, R K ^c   Chandra, B P ^a  

^a PT RAVISHANKAR SHUKLA UNIVERSITY   (India)

^b Raipur Institute of Technology   (India)

^c RANI DURGAVATI UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED DISLOCATIONS; CLEAVED SEMICONDUCTORS; MECHANOLUMINESCENCE (ML); VALENCE BANDS;

BAND STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRIC CHARGE; ELECTRON TUNNELING; FRACTURE; LUMINESCENCE; THERMAL EFFECTS;

SEMICONDUCTOR MATERIALS;

EID: 14944344954     PISSN: 09714588     EISSN: 09751017     Source Type: Journal    
DOI: None     Document Type: Article

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