Meso-porous silicon-based WO 3 nano-particle film gas sensor operating at room temperature

Nami Jishu yu Jingmi Gongcheng/Nanotechnology and Precision Engineering

Volumn 8, Issue 2, 2010, Pages 156-160

  Sun, Feng Yun ^a   Hu, Ming ^a   Sun, Peng ^a   Liu, Bo ^a   Zhang, Jie ^a  

^a TIANJIN UNIVERSITY   (China)

Author keywords

Gas sensing property; Meso porous silicon; Room temperature; WO 3 nano particle film

Indexed keywords

DRY AIR; ELECTROCHEMICAL DISSOLUTION; GAS SENSING PROPERTIES; GAS SENSITIVITY; GAS SENSORS; MESOPOROUS SILICON; REACTIVE MAGNETRON SPUTTERING METHOD; RESPONSE TIME; ROOM TEMPERATURE; SCANNING ELECTRON MICROSCOPES; SINGLE-CRYSTALLINE;

CHEMICAL SENSORS; DISSOLUTION; GAS DETECTORS; GASES; NANOPARTICLES; NANOSENSORS; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION;

POROUS SILICON;

EID: 77951910704     PISSN: 16726030     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (16)

1. +-n silicon junctions surrounded by a porous layer [J]. Sensors and Actuators B, 2008, 134(2): 922-927.
2. Barillaro G, Nannini A, Pieri F. APSFET: A new porous silicon-based gas sensing device [J]. Sensors and Actuators B, 2003, 93(1): 263-270.
3. 2 monitoring at room temperature by a porous silicon gas sensor [J]. Materials Science and Engineering B, 2000, 69/70: 210-214.
4. 2 sensor [J]. Sensors and Actuators B, 2003, 89(3): 237-239.
5. Mizsei J. Gas sensor applications of porous Si layers [J]. Thin Solid Films, 2007, 515(23): 8310-8315.
6. 3 thin films [J]. Sensors and Actuators B, 2007, 128(1): 173-178.
7. 3 microhotplate gas sensors [J]. Sensors and Actuators B, 2006, 113(1): 241-248.
8. Ando M, Chabicovsky R, Haruta M. Optical hydrogen sensitivity of noble metal-tungsten oxide composite films prepared by sputtering deposition [J]. Sensors and Actuators B, 2001, 76(1/2/3): 13-17.
9. 3 thin-film sensors [J]. Sensors and Actuators B, 2005, 105(2): 271-277.
10. 3-x nanoparticles [J]. Journal of Electron Spectroscopy and Related Phenomena, 2007, 156: 172-175.
11. Liang Jiran, Hu Ming, Dou Yanwei. Surface microstructure of porous silicon prepared by electrochemical etching [J]. Nanotechnology and Precision Engineering, 2006, 4(2): 162-166(in Chinese).
12. 3 nanosized material [J]. Journal of Transducer Technology, 2002, 21(11): 11-14(in Chinese).
13. Stievenard D, Deresmes D. Are electrical properties of an aluminum-porous silicon junction governed by dangling bonds? [J]. Applied Physics Letters, 1995, 67(11): 1570-1572.
14. Khoshnevis S, Dariani R S, Azim-Araghi M E, et al. Observation of oxygen gas effect on porous silicon-based sensors [J]. Thin Solid Films, 2006, 515(4): 2650-2654.
15. 3 sensors [J]. Journal of Inorganic Materials, 2006, 21(1): 152-157(in Chinese).
16. 2 gas sensor [J]. Solid-State Electronics, 2008, 52(7): 1071-1074.