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Applied Physics B: Lasers and Optics

Volumn 99, Issue 1-2, 2010, Pages 285-297

Dy-doped Lu2SiO5 single crystal: Spectroscopic characteristics and luminescence dynamics

(5) Dominiak Dzik, G a Ryba Romanowski, W a Lisiecki, R a Solarz, P a Berkowski, M b

a INSTITUTE OF LOW TEMPERATURE AND STRUCTURE RESEARCH (Poland)

b INSTITUTE OF PHYSICS (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DONOR-ACCEPTOR INTERACTION; DYSPROSIUM IONS; EMISSION CROSS SECTION; EMISSION SPECTRUMS; FIELD ENERGY; ION-ION INTERACTION; JUDD-OFELT MODEL; LASER POTENTIAL; LOW TEMPERATURES; LUMINESCENCE DECAYS; LUMINESCENCE DYNAMICS; PROMISING MATERIALS; RADIATIVE RELAXATION; SPECTRAL ENERGY; SPECTROSCOPIC CHARACTERISTICS; STRONG LUMINESCENCE; VISIBLE LASERS; YELLOW LUMINESCENCE;

DOPING (ADDITIVES); DYSPROSIUM; EMISSION SPECTROSCOPY; IONS; LUMINESCENCE; SILICON COMPOUNDS; SINGLE CRYSTALS;

CRYSTAL STRUCTURE;

EID: 77951765238 PISSN: 09462171 EISSN: None Source Type: Journal
DOI: 10.1007/s00340-009-3852-x Document Type: Article

Times cited : (48)

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