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Journal of Applied Physics

Volumn 107, Issue 9, 2010, Pages

Formation of Co2 FeSi/ SiOx NySi tunnel junctions for Si-based spin transistors

(4) Hayashi, Kengo a Takamura, Yota a Nakane, Ryosho b Sugahara, Satoshi a,c

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b UNIVERSITY OF TOKYO (Japan)

c JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; CRYSTALLINITY DEGRADATION; CRYSTALLOGRAPHIC ANALYSIS; FABRICATION TECHNIQUE; FE ATOMS; HEUSLER; HIGH QUALITY; ORIENTED TEXTURES; SI SUBSTRATES; SI-BASED; SILICIDATION; SPIN TRANSISTOR; ULTRA-THIN;

FILM PREPARATION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON; SILICON ALLOYS; SILICON COMPOUNDS;

TUNNEL JUNCTIONS;

EID: 77951682107 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3350913 Document Type: Conference Paper

Times cited : (9)

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