Metallic Mg insertion in rf deposited MgO barrier

Journal of Applied Physics

Volumn 107, Issue 9, 2010, Pages

  Souza, M M C ^a   Sousa, R C ^a   Ducruet, C ^a   Auffret, S ^a   Dieny, B ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; COUPLING FIELDS; MAGNETIC TUNNEL JUNCTION; MGO BARRIER; TUNNEL MAGNETORESISTANCE;

ELECTRIC RESISTANCE; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE;

TUNNEL JUNCTIONS;

EID: 77951674534     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3355995     Document Type: Conference Paper

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