Characterization of ZnGeAs2 thin films produced by pulsed laser deposition

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2009, Pages 000437-000439

  Tang, Z Z ^a   Zhang, L ^a   Singh, R K ^a   Wright, D ^a   Peshek, T ^a,b   Gessert, T ^b   Coutts, T J ^b   Van Schilfgaarde, M ^a   Newman, N ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED SAMPLES; BAND GAPS; ENRICHED TARGETS; GROWTH CONDITIONS; HALL MEASUREMENTS; HOT POINT; OPTICAL ABSORPTION MEASUREMENT; P-TYPE; PHOTOVOLTAIC APPLICATIONS; STOICHIOMETRIC FILMS; SUBSTRATE TEMPERATURE;

ANNEALING; COPPER COMPOUNDS; DEPOSITION; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; PULSED LASER DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THIN FILMS; ZINC;

PULSED LASERS;

EID: 77951600779     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2009.5411649     Document Type: Conference Paper

References (7)

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