Rear junction laser doped solar cells on CZ n-type silicon

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2009, Pages 001811-001815

  Mai, Ly ^a   Hameiri, Ziv ^a   Tjahjono, Budi S ^a   Wenham, Stuart R ^a   Sugianto, Adeline ^a   Edwards, Matt B ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE WAVELENGTH; BORON-DOPED; BULK LIFETIME; COMMERCIAL GRADE; COST EFFECTIVE; CRYSTALLOGRAPHIC QUALITY; FRONT SURFACES; LASER DOPING; METAL LINE; MINORITY CARRIER DIFFUSION LENGTH; N TYPE SILICON; P-TYPE; PERFORMANCE STABILITY; PHOSPHORUS-DOPED; SELECTIVE EMITTERS; SURFACE PASSIVATION;

ALUMINUM; BORON; CONVERSION EFFICIENCY; ENERGY CONVERSION; PASSIVATION; PHOSPHORUS; PRINTING PRESSES; SCREEN PRINTING; SILICON WAFERS; SURFACES;

DOPING (ADDITIVES);

EID: 77951587912     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2009.5411499     Document Type: Conference Paper

References (12)

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9. th World Conference, 2006
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