In situ growth monitoring of strain-balanced quantum-well solar cells by metal-organic vapor phase epitaxy

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2009, Pages 001879-001882

  Sugiyama, Masakazu ^a   Wang, Yunpeng ^b   Deura, Momoko ^a   Onitsuka, Ryusuke ^a   Nakano, Yoshiaki ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; CURRENT MATCHING; GAAS; I-LAYER; IN-SITU GROWTH; IN-SITU MONITORING; IN-SITU OBSERVATIONS; METAL-ORGANIC VAPOR PHASE EPITAXY; QUANTUM WELL; QUANTUM-WELL SOLAR CELLS; STRAIN BALANCE; STRAIN-BALANCED; SURFACE REFLECTIVITY; TANDEM SOLAR CELLS; THREADING DISLOCATION;

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); REFLECTION; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS; SOLAR CELLS; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 77951535262     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2009.5411553     Document Type: Conference Paper

References (3)

1. M. C. Lynch et aI., "Spectral response and I-V characteristics of large well number multi quantum well solar cells", J. Materials Sci. 40, 2005, pp. 1445-1449.
2. N.J. Ekins-Daukes et aI., "Strain-balanced quantum well solar cells", Physica E 14, 2002, pp. 132-135. (Pubitemid 34661641)
3. P. Wolfram et al., " Growth of InGaAsPllnP-laser structures monitored by using RAS techniques", J. Crystal Growth 248, 2003, pp. 240-243.