706-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 9, 2008, Pages 2802-2804

  Nishizawa, J ^a   Plotka P ^a   Kurabayashi, T ^b   Makabe, H ^a,b  

^a SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

^b IWATE PREFECTURAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BROADBAND COMMUNICATION; CONTINUOUS WAVE; FREQUENCY RANGES; GAAS; LOWER FREQUENCIES; MODULATION RATES; MOLECULAR LAYER EPITAXY; RESONANT CAVITY; TRANSIT-TIME; TUNNETT DIODES;

CRYSTAL GROWTH; FABRICATION; GALLIUM ALLOYS; GALLIUM ARSENIDE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM; TELECOMMUNICATION SYSTEMS;

SEMICONDUCTOR DIODES;

EID: 77951276460     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200779256     Document Type: Conference Paper

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