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Volumn 41, Issue 7, 2005, Pages 441-443

290-393 GHz CW fundamental-mode oscillation from GaAs TUNNETT diode

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; BOLOMETERS; ELECTRIC CURRENTS; FABRICATION; MICROPROCESSOR CHIPS; NATURAL FREQUENCIES; OSCILLATIONS; RESONATORS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; TRANSIT TIME DEVICES; WAVEGUIDE COMPONENTS;

EID: 17444394411     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20050267     Document Type: Article
Times cited : (9)

References (13)
  • 1
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    • Nishizawa, J., and Watanabe, Y.: 'High frequency properties of the avalanching negative resistance diode', Sci. Rep. Res. Inst. Tohoku Univ. B, Commun., 1958, 10, (2), pp. 91-108
    • (1958) Sci. Rep. Res. Inst. Tohoku Univ. B, Commun. , vol.10 , Issue.2 , pp. 91-108
    • Nishizawa, J.1    Watanabe, Y.2
  • 2
    • 0038545704 scopus 로고
    • Bulk oscillation by tunnel injection
    • Tohoku University, Sendai, Japan, August
    • Okabe, T., Takamiya, S., Okamoto, K., and Nishizawa, J.: 'Bulk oscillation by tunnel injection'. RIEC Tech. Rep., Tohoku University, Sendai, Japan, August 1968, TR-31, pp. 1-18
    • (1968) RIEC Tech. Rep. , vol.TR-31 , pp. 1-18
    • Okabe, T.1    Takamiya, S.2    Okamoto, K.3    Nishizawa, J.4
  • 5
    • 0018663908 scopus 로고
    • Submillimeter wave oscillation from GaAs TUNNETT diode
    • Brighton, UK
    • Nishizawa, J., Motoya, K., and Okuno, Y.: 'Submillimeter wave oscillation from GaAs TUNNETT diode'. Proc. 9th European Microwave Conf., Brighton, UK, 1979, pp. 463-467
    • (1979) Proc. 9th European Microwave Conf. , pp. 463-467
    • Nishizawa, J.1    Motoya, K.2    Okuno, Y.3
  • 7
    • 0032097043 scopus 로고    scopus 로고
    • Two-terminal millimeter-wave sources
    • Eisele, H., and Haddad, G.I.: 'Two-terminal millimeter-wave sources', IEEE Trans. Microw. Theory Tech., 1998, 46, (6), pp. 739-745
    • (1998) IEEE Trans. Microw. Theory Tech. , vol.46 , Issue.6 , pp. 739-745
    • Eisele, H.1    Haddad, G.I.2
  • 8
    • 0034172342 scopus 로고    scopus 로고
    • Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above
    • Eisele, H., Rydberg, A., and Haddad, G.I.: 'Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above', IEEE Trans. Microw. Theory Tech., 2000, 48, (4, Part 2), pp. 626-631
    • (2000) IEEE Trans. Microw. Theory Tech. , vol.48 , Issue.4 PART 2 , pp. 626-631
    • Eisele, H.1    Rydberg, A.2    Haddad, G.I.3
  • 9
    • 0001835501 scopus 로고
    • The CW GaAs TUNNETT diodes
    • Button, K.J. (Ed.): Academic Press, Boston
    • Nishizawa, J., and Motoya, K.: 'The CW GaAs TUNNETT diodes' in Button, K.J. (Ed.): 'Topics in millimeter wave technology' (Academic Press, Boston, 1988), Vol. 2, pp. 1-46
    • (1988) Topics in Millimeter Wave Technology , vol.2 , pp. 1-46
    • Nishizawa, J.1    Motoya, K.2
  • 10
    • 7044233738 scopus 로고    scopus 로고
    • Time-dependent electron tunneling through time-dependent tunnel barriers
    • Gribnikov, Z.S., and Haddad, G.I.: 'Time-dependent electron tunneling through time-dependent tunnel barriers', J. Appl. Phys., 2004, 96, (7), pp. 3831-3838
    • (2004) J. Appl. Phys. , vol.96 , Issue.7 , pp. 3831-3838
    • Gribnikov, Z.S.1    Haddad, G.I.2
  • 11
    • 1142303980 scopus 로고    scopus 로고
    • 240-325-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy
    • Płotka, P., Nishizawa, J., Kurabayashi, T., and Makabe, H.: '240-325-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy', IEEE Trans. Electron Devices, 2003, 50, (4), pp. 867-873
    • (2003) IEEE Trans. Electron Devices , vol.50 , Issue.4 , pp. 867-873
    • Płotka, P.1    Nishizawa, J.2    Kurabayashi, T.3    Makabe, H.4
  • 12
    • 0035821174 scopus 로고    scopus 로고
    • Transform-limited, narrowlinewidth, terahertz-wave parametric generator
    • Kawase, K., Shikata, J., Imai, K., and Ito, H.: 'Transform-limited, narrowlinewidth, terahertz-wave parametric generator', Appl. Phys. Lett., 2001, 78, (19), pp. 2819-2821
    • (2001) Appl. Phys. Lett. , vol.78 , Issue.19 , pp. 2819-2821
    • Kawase, K.1    Shikata, J.2    Imai, K.3    Ito, H.4
  • 13
    • 0042769381 scopus 로고    scopus 로고
    • Tunable terahertz wave generation in the 3- To 7-THz region from GaP
    • Tanabe, T., Suto, K., Nishizawa, J., Saito, K., and Kimura, T.: 'Tunable terahertz wave generation in the 3- to 7-THz region from GaP', Appl. Phys. Lett., 2003, 83, (2), pp. 237-239
    • (2003) Appl. Phys. Lett. , vol.83 , Issue.2 , pp. 237-239
    • Tanabe, T.1    Suto, K.2    Nishizawa, J.3    Saito, K.4    Kimura, T.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.