Re-investigation of the Bi-induced Si(111)-(sqrt(3) × sqrt(3)) surfaces by low-energy electron diffraction

Surface Science

Volumn 604, Issue 11-12, 2010, Pages 1044-1048

  Kuzumaki, Takuya ^a   Shirasawa, Tetsuroh ^b   Mizuno, Seigi ^c   Ueno, Nobuo ^a   Tochihara, Hiroshi ^c   Sakamoto, Kazuyuki ^a  

^a CHIBA UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c KYUSHU UNIVERSITY   (Japan)

Author keywords

Bismuth; Low energy electron diffraction (LEED); Semiconductor surfaces; Silicon; Surface structure

Indexed keywords

ATOMIC STRUCTURE; HIGH QUALITY; I - V CURVE; RECONSTRUCTED SURFACES; SEMI-CONDUCTOR SURFACES; SI (1 1 1); SILICON SURFACES; STRUCTURAL MODELS;

BISMUTH; CRYSTAL ATOMIC STRUCTURE; ELECTRONS; LOW ENERGY ELECTRON DIFFRACTION; MODEL STRUCTURES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

SURFACE STRUCTURE;

EID: 77951258381     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2010.03.022     Document Type: Article

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