Growth of 〈1 0 0〉 directed ADP crystal with slotted ampoule

Current Applied Physics

Volumn 10, Issue 4, 2010, Pages 1221-1226

  Rajesh, P ^a   Ramasamy, P ^a   Bhagavannarayana, G ^b   Kumar, Binay ^c  

^a SSN COLLEGE OF ENGINEERING   (India)

^b NATIONAL PHYSICAL LABORATORY   (India)

^c UNIVERSITY OF DELHI   (India)

Author keywords

Dielectric materials; High resolution X ray diffraction; Piezoelectric materials; Recrystallization; Single crystal growth

Indexed keywords

ADP CRYSTAL; AMMONIUM DIHYDROGEN PHOSPHATE; CONVENTIONAL METHODS; CRYSTALLINE PERFECTION; GROWING CRYSTALS; GROWN CRYSTALS; HIGH RESOLUTION X RAY DIFFRACTION; HIGH-RESOLUTION X-RAY DIFFRACTOMETERS; LASER DAMAGE THRESHOLD; LOW DIELECTRIC LOSS; OPTICAL TRANSPARENCY; PIEZOELECTRIC CHARGE COEFFICIENT; RECRYSTALLIZATION; RECRYSTALLIZATIONS; UV-VIS SPECTROSCOPY;

AMMONIUM COMPOUNDS; CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTALLIZATION; DIELECTRIC LOSSES; GRAIN BOUNDARIES; LASER DAMAGE; MEMS; PIEZOELECTRIC DEVICES; PIEZOELECTRIC MATERIALS; PIEZOELECTRICITY; RECRYSTALLIZATION (METALLURGY); ULTRAVIOLET LASERS; ULTRAVIOLET SPECTROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SINGLE CRYSTALS;

EID: 77951257123     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2010.02.047     Document Type: Article

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