Minority carrier lifetime variations associated with misfit dislocation networks in heteroepitaxial GaInP

Semiconductor Science and Technology

Volumn 25, Issue 5, 2010, Pages

  Haegel, Nancy M ^a   Williams, Scott E ^a   Frenzen, C L ^a   Scandrett, Clyde ^a  

^a NAVAL POSTGRADUATE SCHOOL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION LENGTH; DOPANT FLUCTUATION; GAINP; HETEROEPITAXIAL; HIGH-QUALITY MATERIALS; INTENSITY FLUCTUATIONS; LOW CONCENTRATIONS; LUMINESCENCE BAND; LUMINESCENCE INTENSITY; MINORITY CARRIER; MINORITY CARRIER LIFETIMES; MISFIT DISLOCATIONS; MODEL-BASED; NON-RADIATIVE LIFETIMES; NON-RADIATIVE RECOMBINATIONS; OPTICAL TECHNIQUE; P-TYPE; PERIODIC VARIATION; RADIATIVE RECOMBINATION; SPATIAL RESOLUTION; SPATIAL VARIATIONS;

GERMANIUM; HETEROJUNCTIONS; LANTHANUM COMPOUNDS; LIGHT; LUMINESCENCE; OPTICAL PROPERTIES; TRANSPORT PROPERTIES;

CARRIER LIFETIME;

EID: 77951246535     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/5/055017     Document Type: Article

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