SIMS and Raman studies of Mg-doped InN

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1648-1651

  Davydov, V Yu ^a   Klochikhin, A A ^a,b   Smirnov, M B ^c   Kitaev, Yu E ^a   Smirnov, A N ^a   Lundina, E Y ^a   Lu, Hai ^d   Schaff, William J ^d   Lee, H M ^e   Lin, H W ^e   Hong, Y L ^e   Gwo, S ^e  

^a IOFFE INSTITUTE   (Russian Federation)

^b PETERSBURG NUCLEAR PHYSICS INSTITUTE   (Russian Federation)

^c ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^d School of Operations Research and Industrial Engineering   (United States)

^e NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

INN FILMS; LATTICE DYNAMICS; MG CONTENT; MG-DOPED; QUANTITATIVE CHARACTERIZATION; RAMAN SPECTRA; RAMAN STUDIES; SUBSTITUTIONAL IMPURITIES;

CRYSTAL LATTICES; IMPURITIES; NITRIDES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SOLIDS; SUBSTITUTION REACTIONS;

SECONDARY BATTERIES;

EID: 77951242029     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778563     Document Type: Conference Paper

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