MOCVD growth of GaN-based materials on ZnO substrates

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1736-1739

  Wang, Shen Jie ^a   Li, Nola ^a   Park, Eun Hyun ^a   Feng, Zhe Chuan ^b   Valencia, Adriana ^c   Nause, Jeff ^c   Kane, Matthew ^a   Summers, Chris ^d   Ferguson, Ian ^a,d  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c Cermet Inc   (United States)

^d Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACK ETCHING; BAND GAPS; EPILAYER GROWTH; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; FILM QUALITY; GAN FILM; GROWTH OF GAN; HRXRD; INDIUM CONCENTRATION; INDIUM DROPLET; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; MOCVD GROWTH; OUT-DIFFUSION; PEAK ENERGY; THERMAL STABILITY; ZNO; ZNO SUBSTRATE;

CHEMICAL VAPOR DEPOSITION; CRYSTAL IMPURITIES; DROP FORMATION; EPILAYERS; EPITAXIAL GROWTH; GALLIUM NITRIDE; INDIUM; OPTICAL MICROSCOPY; PHASE SEPARATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBSTRATES; THERMODYNAMIC STABILITY; THERMOGRAVIMETRIC ANALYSIS; ZINC; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 77951230735     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778614     Document Type: Conference Paper

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