Detection of mutant p53 using field-effect transistor biosensor

Analytica Chimica Acta

Volumn 665, Issue 1, 2010, Pages 79-83

  Han, Sang Hee ^a,b   Kim, Sang Kyu ^a,b   Park, Kyoungsook ^a,b   Yi, So Yeon ^a   Park, Hye Jung ^a   Lyu, Hong Kun ^c   Kim, Moonil ^a,b,d   Chung, Bong Hyun ^a,b  

^a Korea Research Institute of Bioscience and Biotechnology (KRIBB)   (South Korea)

^b University of Science and Technology (UST)   (South Korea)

^c Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

^d AUBURN UNIVERSITY   (United States)

Author keywords

Biosensor; DNA binding domain; Metal oxide semiconductor field effect transistor; Mutant p53; P53

Indexed keywords

DNA-BINDING; DNA-BINDING DOMAIN; DNA-PROTEIN INTERACTION; FET-TYPE BIOSENSORS; FIELD-EFFECT; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOS-FET; P53 PROTEIN; PROTEIN BINDING; SEMICONDUCTOR ANALYZER; SENSING LAYERS;

BIOCHEMISTRY; DNA; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; GENES; MESFET DEVICES; METALLIC COMPOUNDS; MONITORING; MOS DEVICES; PROTEINS; SURFACE PLASMON RESONANCE;

BIOSENSORS;

MUTANT PROTEIN; PROTEIN P53;

ARTICLE; BIOSENSOR; CONTROLLED STUDY; FIELD EFFECT TRANSISTOR; GENE MUTATION; PRIORITY JOURNAL; PROTEIN DNA INTERACTION; PROTEIN IMMOBILIZATION; SURFACE PLASMON RESONANCE; SURFACE PROPERTY;

BIOSENSING TECHNIQUES; DNA; MUTAGENESIS, SITE-DIRECTED; MUTATION; PROTEIN BINDING; PROTEIN STRUCTURE, TERTIARY; RECOMBINANT PROTEINS; SURFACE PLASMON RESONANCE; TRANSISTORS, ELECTRONIC; TUMOR SUPPRESSOR PROTEIN P53;

EID: 77951209238     PISSN: 00032670     EISSN: 18734324     Source Type: Journal    
DOI: 10.1016/j.aca.2010.03.006     Document Type: Article

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